SI4503DY datasheet(2/7 Pages) VISHAY

Part #	SI4503DY

Description	N- and P-Channel MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4503DY

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 71770

S-20894—Rev. B, 17-Jun-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

VDS = VGS, ID = 250 mA

N-Ch

0.8

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

N-Ch

P-Ch

–0.45

V

VDS = 0 V, VGS = "20 V

N-Ch

"100

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

N-Ch

P-Ch

"100

nA

VDS = 24 V, VGS = 0 V

N-Ch

1

VDS = –6.4 V, VGS = 0 V

N-Ch

P-Ch

–1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 55_C

N-Ch

5

mA

VDS = –6.4 V, VGS = 0 V, TJ = 55_C

N-Ch

P-Ch

–5

VDS = 5 V, VGS = 10 V

N-Ch

30

On-State Drain Currentb

ID(on)

VDS = –5 V, VGS = –4.5 V

N-Ch

P-Ch

–20

A

VGS = 10 V, ID = 8.8 A

N-Ch

0.015

0.018

VGS = –4.5 V, ID = –4.5 A

N-Ch

P-Ch

0.034

0.042

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = 4.5 V, ID = 7.2 A

N-Ch

0.022

0.027

W

VGS = –2.5 V, ID = –3.7 A

N-Ch

P-Ch

0.048

0.060

VDS = 15 V, ID = 8.8 A

N-Ch

20

Forward Transconductanceb

gfs

VDS = –15 V, ID = –4.5 A

N-Ch

P-Ch

13

S

IS = 2.0 A, VGS = 0 V

N-Ch

0.71

1.1

Diode Forward Voltageb

VSD

IS = –1.2 A, VGS = 0 V

N-Ch

P-Ch

–0.70

–1.1

V

Dynamica

N-Ch

14.5

20

Total Gate Charge

Qg

N-Ch

P-Ch

15

25

N-Channel

VDS = 15 V, VGS = 5 V, ID = 8.8 A

N-Ch

3.3

Gate-Source Charge

Qgs

P-Channel

N-Ch

P-Ch

3.0

nC

P-Channel

VDS = –4 V, VGS = –5 V, ID = –4.5 A

N-Ch

6.6

Gate-Drain Charge

Qgd

N-Ch

P-Ch

2.0

N-Ch

13

20

Turn-On Delay Time

td(on)

N-Ch

P-Ch

20

40

N-Channel

VDD = 15 V, RL = 15 W

N-Ch

9

18

Rise Time

tr

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

N-Ch

P-Ch

50

100

P-Channel

W

N-Ch

35

50

Turn-Off Delay Time

td(off)

VDD = –4 V, RL = 4 W

I

^ –1 A, V

= –4.5 V, R = 6

W

N-Ch

P-Ch

110

220

ns

ID ^ –1 A, VGEN = –4.5 V, RG = 6 W

N-Ch

17

30

Fall Time

tf

N-Ch

P-Ch

60

120

m

N-Ch

35

70

Source-Drain Reverse Recovery Time

trr

IF = 1.7 A, di/dt = 100 A/ms

N-Ch

P-Ch

60

100

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

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