SI4394DY-T1-E3 datasheet(3/5 Pages) VISHAY

Part #	SI4394DY-T1-E3

Description	N-Channel Reduced Qdg, Fast Switching WFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4394DY

Vishay Siliconix

New Product

Document Number: 72713

S-40442—Rev. A, 15-Mar-04

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

440

880

1320

1760

2200

0

6

12

18

24

30

0.6

0.8

1.0

1.2

1.4

1.6

1.8

−50

−25

0

25

50

75

100

125

150

0

1

2

3

4

5

6

0369

12

15

18

0.000

0.003

0.006

0.009

0.012

0.015

0

1020304050

VDS − Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 15 V

ID = 15 A

ID − Drain Current (A)

VGS = 10 V

ID = 15 A

VGS = 10 V

Gate Charge

On-Resistance vs. Drain Current

Qg − Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.000

0.008

0.016

0.024

0.032

0.040

02468

10

TJ = 25_C

ID = 15 A

60

10

0.1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

VGS − Gate-to-Source Voltage (V)

VGS = 4.5 V

1

TJ = 150_C

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SI4394DY-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix

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