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MBRD660CTT4G Datasheet(PDF) 2 Page - ON Semiconductor |
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MBRD660CTT4G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol MBRD Unit Rating Symbol 620CT 630CT 640CT 650CT 660CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 V Average Rectified Forward Current Per Diode TC = 130°C (Rated VR) Per Device IF(AV) 3 6 A Peak Repetitive Forward Current, TC = 130°C (Rated VR, Square Wave, 20 kHz) Per Diode IFRM 6 A Nonrepetitive Peak Surge Current − (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 75 A Peak Repetitive Reverse Surge Current (2 ms, 1 kHz) IRRM 1 A Operating Junction Temperature TJ −65 to +150 °C Storage Temperature Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS PER DIODE Maximum Thermal Resistance − Junction−to−Case RqJC 6 °C/W Maximum Thermal Resistance − Junction−to−Ambient (Note 1) RqJA 80 °C/W ELECTRICAL CHARACTERISTICS PER DIODE Maximum Instantaneous Forward Voltage (Note 2) iF = 3 Amps, TC = 25°C iF = 3 Amps, TC = 125°C iF = 6 Amps, TC = 25°C iF = 6 Amps, TC = 125°C VF 0.7 0.65 0.9 0.85 V Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C) iR 0.1 15 mA 1. Rating applies when surface mounted on the minimum pad size recommended. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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