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ISL6251AHRZ-T Datasheet(PDF) 3 Page - Intersil Corporation |
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ISL6251AHRZ-T Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 20 page 3 FN9202.1 June 17, 2005 Absolute Maximum Ratings Thermal Information DCIN, CSIP, CSON to GND. . . . . . . . . . . . . . . . . . . . . -0.3V to +28V CSIP-CSIN, CSOP-CSON . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V PHASE to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -7V to 30V BOOT to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +35V BOOT-PHASE, VDD-GND, VDDP-PGND, ACPRN to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V ACSET to GND (Note 3) . . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V ICM, ICOMP, VCOMP to GND. . . . . . . . . . . . . . -0.3V to VDD+0.3V ACLIM, CHLIM, VREF, CELLS to GND . . . . . . . -0.3V to VDD+0.3V EN, VADJ, PGND to GND . . . . . . . . . . . . . . . . . .-0.3V to VDD+0.3V UGATE. . . . . . . . . . . . . . . . . . . . . . . . . PHASE-0.3V to BOOT+0.3V LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . PGND-0.3V to VDDP+0.3V Thermal Resistance θJA(°C/W) θJC (°C/W) QFN Package (Notes 4, 6). . . . . . . . . . 39 9.5 QSOP Package (Note 5) . . . . . . . . . . . 88 N/A ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 2 Junction Temperature Range. . . . . . . . . . . . . . . . . .-10°C to +150°C Operating Temperature Range . . . . . . . . . . . . . . . .-10°C to +100°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Lead Temperature (soldering, 10s) . . . . . . . . . . . . . . . . . . . . +300°C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 3. When the voltage across ACSET is below 0V, the current through ACSET should be limited to less than 1mA. 4. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech Brief TB379. 5. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 6. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside. Electrical Specifications DCIN=CSIP=CSIN=18V, CSOP=CSON=12V, ACSET=1.5V, ACLIM=VREF, VADJ=Floating, EN=VDD=5V, BOOT-PHASE=5.0V, GND=PGND=0V, CVDD=1µF, IVDD=0mA, TA=-10°C to +100°C, TJ ≤ 125°C, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNITS SUPPLY AND BIAS REGULATOR DCIN Input Voltage Range 7 25 V DCIN Quiescent Current EN=VDD or GND, 7V ≤ DCIN ≤ 25V 1.4 3 mA Battery Leakage Current (Note 7) DCIN=0, no load 3 10 µA VDD Output Voltage/Regulation 7V ≤ DCIN ≤ 25V, 0 ≤ IVDD ≤ 30mA 4.925 5.075 5.225 V VDD Undervoltage Lockout Trip Point VDD Rising 4.0 4.4 4.6 V Hysteresis 200 250 400 mV Reference Output Voltage VREF 0 ≤ IVREF ≤ 300µA 2.365 2.39 2.415 V Battery Charge Voltage Accuracy CSON=16.8V, CELLS=VDD, VADJ=Float -0.5 0.5 % CSON=12.6V, CELLS=GND, VADJ=Float -0.5 0.5 % CSON=8.4V, CELLS=Float, VADJ=Float -0.5 0.5 % CSON=17.64V, CELLS=VDD, VADJ=VREF -0.5 0.5 % CSON=13.23V, CELLS=GND, VADJ=VREF -0.5 0.5 % CSON=8.82V, CELLS=Float, VADJ=VREF -0.5 0.5 % CSON=15.96V, CELLS=VDD, VADJ=GND -0.5 0.5 % CSON=11.97V, CELLS=GND, VADJ=GND -0.5 0.5 % CSON=7.98V, CELLS=Float, VADJ=GND -0.5 0.5 % TRIP POINTS ACSET Threshold 1.24 1.26 1.28 V ACSET Input Bias Current Hysteresis 2.2 3.4 4.4 µA ACSET Input Bias Current ACSET ≥ 1.26V 2.2 3.4 4.4 µA ACSET Input Bias Current ACSET < 1.26V -1 0 1 µA ISL6251, ISL6251A |
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