3

FN7297.3

May 9, 2005

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C

Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . +135°

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests

DC Electrical Specifications

PARAMETER

DESCRIPTION

CONDITIONS

MIN

TYP

MAX

UNIT

Reference Accuracy

1.24

1.26

1.28

V

Reference Temperature Coefficient

50

ppm/°C

Reference Load Regulation

-1

%

Oscillator Ramp Amplitude

1.15

V

Oscillator Charge Current

200

µA

Oscillator Discharge Current

8

mA

2

3.5

5

mA

IVDD_OFF

EN = 0

1

1.5

mA

3.5

3.9

V

44.35

V

Over Temperature Threshold

135

°C

Over Temperature Hysteresis

20

°C

Internal FET Leakage Current

10

µA

Peak Current Limit

5

A

FET On Resistance

Wafer level test only

30

60

m

Ω

0.2

m

Ω/°C

Auxiliary Supply Tracking Positive

Input Pull Down Current

-4

2.5

µA

Auxiliary Supply Tracking Negative

Input Pull Up Current

2.5

4

µA

Positive Power Good Threshold

With respect to target output voltage

6

14

%

Negative Power Good Threshold

With respect to target output voltage

-14

-6

%

Power Good Drive High

4

V

Power Good Drive Low

0.5

V

Over Voltage Protection

10

%

0.960

0.975

0.99

V

Output Initial Accuracy

(EL7564CRE)

0.977

0.992

1.007

V

Output Line Regulation

0.5

%

Output Load Regulation

0.5

%

Output Temperature Stability

±1

%

Feedback Input Pull Up Current

100

200

nA

EN Input High Level

3.2

4

V

EN Input Low Level

1

V

Enable Pull Up Current

-4

-2.5

µA

EL7564