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EL7564CRE Datasheet(PDF) 3 Page - Intersil Corporation |
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EL7564CRE Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 17 page 3 FN7297.3 May 9, 2005 Absolute Maximum Ratings (TA = 25°C) Supply Voltage between VIN or VDD and GND . . . . . . . . . . . . +6.5V VLX Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VIN +0.3V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, VDD +0.3V VHI Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, VLX +6.5V Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . +135° CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA DC Electrical Specifications VDD = VIN = 5V, TA = TJ = 25°C, COSC = 1.2nF, Unless Otherwise Specified. PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT VREF Reference Accuracy 1.24 1.26 1.28 V VREFTC Reference Temperature Coefficient 50 ppm/°C VREFLOAD Reference Load Regulation 0 < IREF < 50µA -1 % VRAMP Oscillator Ramp Amplitude 1.15 V IOSC_CHG Oscillator Charge Current 0.1V < VOSC < 1.25V 200 µA IOSC_DIS Oscillator Discharge Current 0.1V < VOSC < 1.25V 8 mA IVDD+VDRV VDD+VDRV Supply Current VEN = 4V, FOSC = 120kHz 2 3.5 5 mA IVDD_OFF VDD Standby Current EN = 0 1 1.5 mA VDD_OFF VDD for Shutdown 3.5 3.9 V VDD_ON VDD for Startup 44.35 V TOT Over Temperature Threshold 135 °C THYS Over Temperature Hysteresis 20 °C ILEAK Internal FET Leakage Current EN = 0, LX = 5V (low FET), LX = 0V (high FET) 10 µA ILMAX Peak Current Limit 5 A RDSON FET On Resistance Wafer level test only 30 60 m Ω RDSONTC RDSON Tempco 0.2 m Ω/°C ISTP Auxiliary Supply Tracking Positive Input Pull Down Current VSTP = VIN / 2 -4 2.5 µA ISTN Auxiliary Supply Tracking Negative Input Pull Up Current VSTN = VIN / 2 2.5 4 µA VPGP Positive Power Good Threshold With respect to target output voltage 6 14 % VPGN Negative Power Good Threshold With respect to target output voltage -14 -6 % VPG_HI Power Good Drive High IPG = +1mA 4 V VPG_LO Power Good Drive Low IPG = -1mA 0.5 V VOVP Over Voltage Protection 10 % VFB Output Initial Accuracy (EL7564CM) ILOAD = 0A 0.960 0.975 0.99 V Output Initial Accuracy (EL7564CRE) 0.977 0.992 1.007 V VFB_LINE Output Line Regulation VIN = 5V, ∆VIN = 10%, ILOAD = 0A 0.5 % VFB_LOAD Output Load Regulation 0.5A < ILOAD < 4A 0.5 % VFB_TC Output Temperature Stability -40°C < TA < 85°C, ILOAD = 2A ±1 % IFB Feedback Input Pull Up Current VFB = 0V 100 200 nA VEN_HI EN Input High Level 3.2 4 V VEN_LO EN Input Low Level 1 V IEN Enable Pull Up Current VEN = 0 -4 -2.5 µA EL7564 |
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