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FDD6670AS_NL Datasheet(PDF) 6 Page - Fairchild Semiconductor

Part # FDD6670AS_NL
Description  30V N-Channel PowerTrench SyncFET
Download  7 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD6670AS_NL Datasheet(HTML) 6 Page - Fairchild Semiconductor

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FDD6670AS Rev A (W)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6670AS.
Figure 12. FDD6670AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDD6670A).
Figure 13. Non-SyncFET (FDD6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage.
This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
VDS, REVERSE VOLTAGE (V)
100
oC
25
oC
125
oC
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
TIME : 12.5ns/div


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