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FDM2452NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor

Part No. FDM2452NZ
Description  Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDM2452NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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July 2005
©2005 Fairchild Semiconductor Corporation
FDM2452NZ Rev C1
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This dual N-Channel MOSFET has been designed
using
Fairchild
Semiconductor’s
advanced
Power
Trench process to optimize the RDS(ON) @ VGS = 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
• Li-Ion Battery Pack
Features
• 8.1 A, 30 V
RDS(ON) = 21 mΩ @ VGS = 4.5 V
RDS(ON) = 25 mΩ @ VGS = 2.5 V
• ESD protection Diode(note 3)
• Low Profile – 0.8 mm maximum – in the new
package MicroFET 2 x 5 mm
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
Q1
Q2
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
– Continuous
(Note 1a)
8.1
A
– Pulsed
30
PD
Power Dissipation (Steady State)
(Note 1a)
2.2
W
(Note 1b)
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
55
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
145
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2452Z
FDM2452NZ
13’’
12mm
3000 units
PIN 1
G2
S2
S2
G1
S1
S1
S1 S1 G1
S2 S2 G2
MLP 2x5


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