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MMG3013NT1 Datasheet(HTML) 2 Page - NXP Semiconductors

Part No. MMG3013NT1
Description  Heterojunction Bipolar Transistor Technology (InGaP HBT)
Download  15 Pages
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Maker  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
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MMG3013NT1 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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RF Device Data
Freescale Semiconductor, Inc.
MMG3013NT1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TA =25°C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
900 MHz
2140 MHz
Gp
19.3
16
20
17
dB
Input Return Loss (S11)
IRL
--17
dB
Output Return Loss (S22)
ORL
--11
dB
Power Output @ 1dB Compression
P1dB
20.5
dBm
Third Order Output Intercept Point
OIP3
36
dBm
Noise Figure
NF
4
dB
Supply Current (1)
ICC
80
90
110
mA
Supply Voltage (1)
VCC
5
V
1. For reliable operation, the junction temperature should not exceed 150°C.


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