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FDS5682_NL Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDS5682_NL Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page FDS5682 Rev. A www.fairchildsemi.com 2 MOSFET Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current 7.5 A Continuous (TA = 25 oC, V GS = 10V, R θJA = 50 oC/W) Continuous (TA = 25 oC, V GS = 4.5V, R θJA = 50 oC/W) 6.7 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 1) 94 mJ PD Power dissipation 2.5 W Derate above 25oC 20 mW/oC TJ, TSTG Operating and Storage Temperature -55 to 150 oC Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Note 2) 25 oC/W RθJA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 oC/W RθJA Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS5682 FDS5682 SO-8 330mm 12mm 2500 units FDS5682 FDS5682_NL (Note 4) SO-8 330mm 12mm 2500 units Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VDS = 50V - - 1 µA VGS = 0V TA = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 - 2 V rDS(ON) Drain to Source On Resistance ID = 7.5A, VGS = 10V - 0.017 0.021 Ω ID = 6.7A, VGS = 4.5V - 0.021 0.0265 ID = 7.5A, VGS = 10V, TA = 150 oC - 0.034 0.040 Dynamic Characteristics CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 1650 - pF COSS Output Capacitance - 170 - pF CRSS Reverse Transfer Capacitance - 65 - pF RG Gate Resistance - 3.7 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 30V ID = 7.5A Ig = 1.0mA - 27 35 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 15 20 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 1.6 2.1 nC Qgs Gate to Source Gate Charge - 4.3 - nC Qgs2 Gate Charge Threshold to Plateau - 2.7 - nC Qgd Gate to Drain “Miller” Charge - 4.5 - nC |
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