FDS5682 Rev. A

www.fairchildsemi.com

2

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

60

V

Gate to Source Voltage

±20

V

Drain Current

7.5

A

6.7

A

Pulsed

Figure 4

A

Single Pulse Avalanche Energy (Note 1)

94

mJ

Power dissipation

2.5

W

20

Operating and Storage Temperature

-55 to 150

Thermal Characteristics

Thermal Resistance, Junction to Case (Note 2)

25

Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)

50

Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)

85

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDS5682

FDS5682

SO-8

330mm

12mm

2500 units

FDS5682

FDS5682_NL (Note 4)

SO-8

330mm

12mm

2500 units

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

Drain to Source Breakdown Voltage

60

-

-

V

Zero Gate Voltage Drain Current

-

-

1

µA

-

-

250

Gate to Source Leakage Current

-

-

±100

nA

On Characteristics

Gate to Source Threshold Voltage

1

-

2

V

Drain to Source On Resistance

-

0.017

0.021

Ω

-

0.021

0.0265

-

0.034

0.040

Dynamic Characteristics

Input Capacitance

f = 1MHz

-

1650

-

pF

Output Capacitance

-

170

-

pF

Reverse Transfer Capacitance

-

65

-

pF

Gate Resistance

-

3.7

-

Ω

Total Gate Charge at 10V

-

27

35

nC

Total Gate Charge at 5V

-

15

20

nC

Threshold Gate Charge

-

1.6

2.1

nC

Gate to Source Gate Charge

-

4.3

-

nC

Gate Charge Threshold to Plateau

-

2.7

-

nC

Gate to Drain “Miller” Charge

-

4.5

-

nC