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FDS6299S Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FDS6299S Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 6 page  FDS6299S Rev C (W) Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6299S. Figure 12. FDS6299S SyncFET body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TA = 125 oC TA = 25 oC TA = 100 oC Figure 13. SyncFET body diode reverse leakage versus drain-source voltage and temperature. TIME : 12.5ns/div |
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