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FDS6299S Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDS6299S Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDS6299S Rev C (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C 32 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.7 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C –4 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 19 A VGS=10 V, ID =21 A, TJ=125°C 3.3 4.1 4.5 3.9 5.1 5.6 m Ω gFS Forward Transconductance VDS = 10 V, ID = 21 A 94 S Dynamic Characteristics Ciss Input Capacitance 3880 pF Coss Output Capacitance 1030 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 310 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 0.4 1.8 3.1 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 12 22 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 60 96 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 35 56 ns Qg(TOT) Total Gate Charge at VGS=10V 58 81 nC Qg Total Gate Charge at VGS=5V 31 43 nC Qgs Gate–Source Charge 11 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 21 A 8 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) 420 700 mV trr Diode Reverse Recovery Time 32 ns IRM Diode Reverse Recovery Current 2.1 A Qrr Diode Reverse Recovery Charge IF = 21 A, dIF/dt = 300 A/µs (Note 3) 34 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in 2 pad of 2 oz copper b) 105°/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. 3. See “SyncFET Schottky body diode characteristics” below. |
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