![]() |
Electronic Components Datasheet Search |
|
FDS6688S Datasheet(PDF) 4 Page - Fairchild Semiconductor |
|
FDS6688S Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page ![]() FDS6688S Rev C (W) Typical Characteristics (continued) 0 2 4 6 8 10 0 10203040 5060 Qg, GATE CHARGE (nC) ID = 16.0A VDS = 10V 20V 15V 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Crss Coss f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 10ms 10s 100us 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 125°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJC(t) = r(t) * RθJC RθJC = 125 °C/W TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 P(pk t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
Similar Part No. - FDS6688S |
|
Similar Description - FDS6688S |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |