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FDS6688S Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDS6688S Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDS6688S Rev C (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C 28 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.4 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C –4 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 14.5 A VGS=10 V, ID =16 A, TJ=125°C 4.8 5.7 6.5 6.0 7.5 m Ω gFS Forward Transconductance VDS = 10 V, ID = 16 A 74 S Dynamic Characteristics Ciss Input Capacitance 3290 pF Coss Output Capacitance 890 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 290 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.5 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 12 22 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 30 46 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 60 96 ns Qg(TOT) Total Gate Charge at VGS=10V 56 78 nC Qg Total Gate Charge at VGS=5V 31 44 nC Qgs Gate–Source Charge 8.2 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 16 A 9.0 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) 380 700 mV trr Diode Reverse Recovery Time 30 ns IRM Diode Reverse Recovery Current 2 A Qrr Diode Reverse Recovery Charge IF = 16 A, diF/dt = 300 A/µs (Note 3) 31 nC Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in 2 pad of 2 oz copper b) 105°/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. See “SyncFET Schottky body diode characteristics” below Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
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Similar Description - FDS6688S |
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