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FDZ2553NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

Part No. FDZ2553NZ
Description  Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
Download  6 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDZ2553NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FDZ2553NZ Rev C (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
12
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS =
±12 V,
VDS = 0 V
±10
µA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
0.6
0.9
1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–0.3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 9.6 A
VGS = 2.5 V,
ID = 7.9 A
VGS = 4.5 V, ID = 9.6 A, TJ=125
°C
12
16
16
14
20
24
m
ID(on)
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
10
20
A
gFS
Forward Transconductance
VDS = 5 V,
ID = 9.6 A
45
S
Dynamic Characteristics
Ciss
Input Capacitance
1240
pF
Coss
Output Capacitance
320
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
170
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
2.1
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
10
20
ns
tr
Turn–On Rise Time
14
26
ns
td(off)
Turn–Off Delay Time
26
42
ns
tf
Turn–Off Fall Time
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V,
RGEN = 6
11
19
ns
Qg
Total Gate Charge
13
18
nC
Qgs
Gate–Source Charge
3
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 9.6 A,
VGS = 5 V
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.7
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.7 A
(Note 2)
0.7
1.2
V
trr
Diode Reverse Recovery Time
20
nS
Qrr
Diode Reverse Recovery Charge
IF = 9.6A,
diF/dt = 100 A/µs
6
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the sol der ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
(a). RθJA = 60°C/W when mounted on a 1in
2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b). RθJA = 108°C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.


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