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MC74HC244AN Datasheet(PDF) 3 Page - ON Semiconductor |
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MC74HC244AN Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page MC74HC244A http://onsemi.com 3 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Unit v 125_C v 85_C – 55 to 25 _C VCC V Test Conditions Parameter Symbol Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA IOZ Maximum Three–State Leakage Current Output in High–Impedance State Vin = VIL or VIH Vout = VCC or GND 6.0 ± 0.5 ± 5.0 ± 10 µA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 µA 6.0 4.0 40 160 µA NOTE: Information on typical parametric values and high frequency or heavy load considerations can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns) Guaranteed Limit Symbol Parameter VCC V – 55 to 25 _C v85_C v125_C Unit tPLH, tPHL Maximum Propagation Delay, A to YA or B to YB (Figures 1 and 3) 2.0 3.0 4.5 6.0 96 50 18 15 115 60 23 20 135 70 27 23 ns tPLZ, tPHZ Maximum Propagation Delay, Output Enable to YA or YB (Figures 2 and 4) 2.0 3.0 4.5 6.0 110 60 22 19 140 70 28 24 165 80 33 28 ns tPZL, tPZH Maximum Propagation Delay, Output Enable to YA or YB (Figures 2 and 4) 2.0 3.0 4.5 6.0 110 60 22 19 140 70 28 24 165 80 33 28 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 3) 2.0 3.0 4.5 6.0 60 23 12 10 75 27 15 13 90 32 18 15 ns Cin Maximum Input Capacitance — 10 10 10 pF Cout Maximum Three–State Output Capacitance (Output in High–Impedance State) — 15 15 15 pF NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). Typical @ 25 °C, VCC = 5.0 V CPD Power Dissipation Capacitance (Per Buffer)* 34 pF * Used to determine the no–load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). |
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