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IKW30N60T Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # IKW30N60T
Description  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW30N60T Datasheet(HTML) 9 Page - Infineon Technologies AG

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IKW30N60T
TrenchStop Series
q
Power Semiconductors
9
Rev. 2.1 Dev-04
1µs10µs 100µs 1ms
10ms 100ms
10
-2K/W
10
-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
100ns 1µs10µs 100µs 1ms 10ms100ms
10
-2K/W
10
-1K/W
10
0K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
700A/µs
800A/µs
900A/µs 1000A/µs
0ns
50ns
100ns
150ns
200ns
250ns
T
J=25°C
T
J=175°C
700A/µs
800A/µs
900A/µs
1000A/µs
0.0µC
0.5µC
1.0µC
1.5µC
2.0µC
T
J=25°C
T
J=175°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=30A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 30A,
Dynamic test circuit in Figure E)
R
,( K / W )
τ , (s )
0.29566
6.478*10
-2
0.25779
6.12*10
-3
0.19382
4.679*10
-4
0.05279
6.45*10
-5
C 1=
τ1/R1
R1
R2
C2=
τ2/R2
R
,( K/ W )
τ , (s )
0.19517
1.079*10
-1
6
0.26773
1.546*10
-2
0.31252
2.297*10
-3
0.22545
2.234*10
-4
0.04916
7.5*10
-6
C 1=
τ1/R1
R1
R2
C 2=
τ2/R2


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