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THAT300S Datasheet(PDF) 4 Page - List of Unclassifed Manufacturers

Part # THAT300S
Description  Low-Noise Matched Transistor Array ICs
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THAT300S Datasheet(HTML) 4 Page - List of Unclassifed Manufacturers

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THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
Page 4
THAT300 Series Transistor Arrays
SPECIFICATIONS1 (Cont’d)
PNP Electrical Characteristics2
Parameter
Symbol
Conditions
Min
Typ
Max
Units
PNP Current Gain
hfe
VCB =10V
IC =1mA
50
75
IC =10
mA75
PNP Current Gain Matching
Dhfe
VCB =10V,IC =1 mA
5
%
PNP Noise Voltage Density
eN
VCB =10V,IC = 1 mA, 1 kHz
0.75
nV Hz
PNP Gain-Bandwidth Product
fT
IC = 1 mA, VCB = 10 V
325
MHz
PNP
DVBE (THAT320: VBE1-VBE2; VBE3-VBE4) (THAT340: VBE3-VBE4)
VOS
IC =1mA
±0.5
±3mV
IC =10
mA—
±0.5
mV
PNP
DIB (THAT320: IB1-IB2; IB3-IB4) (THAT340: IB3-IB4)
IOS
IC =1mA
±700
±1800
nA
IC =10
mA—
±7
nA
PNP Collector-Base
Leakage Current
ICBO
VCB =25V
–25
pA
PNP Bulk Resistance
rBE
VCB =0V,10
mA< IC<10mA
2
W
PNP Base Spreading Resistance
rbb
VCB =10V,IC =1mA
25
W
PNP Collector Saturation Voltage
VCE(SAT)
IC = 1 mA, IB = 100
mA
–0.05
V
PNP Output Capacitance
COB
VCB =10V,IE = 0 mA, 100 kHz
3
pF
PNP Collector-Collector Capacitance (THAT320: Q1-Q2; Q3-Q4) (THAT340: Q3-Q4)
CCC
VCC = 0 V, 100 kHz
0.6
pF
Information furnished by THAT Corporation is believed to be accurate and reliable. However no responsibility is as-
sumed by THAT Corporation for it’s use nor for any infringements of patents or other rights of third parties which may
result from it’s use.
LIFE SUPPORT POLICY
THAT Corporation products are not designed for use in life support equipment where malfunction of such products
can reasonably be expected to result in personal injury or death. The buyer uses or sells such products for life suport
application at the buyer’s own risk and agrees to hold harmless THAT Corporation from all damages, claims, suits or
expense resulting from such use.
CAUTION: THIS IS AN ESD (ELECTROSTATIC DISCHARGE) SENSITIVE DEVICE.
It can be damaged by the currents generated by electrostatic discharge. Static charge and therefore dangerous volt-
ages can accumulate and discharge without detection causing a loss of function or performance to occur.
The transistors in this device are unprotected in order to maximize performance and flexibility. They are more sen-
sitive to ESD damage than many other ICs which include protection devices at their inputs. Note that all of the pins
(not just the "inputs") are susceptible.
Use ESD preventative measures when storing and handling this device. Unused devices should be stored in conduc-
tive packaging. Packaging should be discharged to the destination socket before the devices are removed. ESD damage
can occur to these devices even after they are installed in a board-level assembly. Circuits should include specific and
appropriate ESD protection.


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