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MSP430FG4619 Datasheet(PDF) 47 Page - Texas Instruments |
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MSP430FG4619 Datasheet(HTML) 47 Page - Texas Instruments |
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47 / 116 page  47 MSP430FG4619, MSP430FG4618, MSP430FG4617, MSP430FG4616 MSP430CG4619, MSP430CG4618, MSP430CG4617, MSP430CG4616 www.ti.com SLAS508K – APRIL 2006 – REVISED MAY 2020 Submit Documentation Feedback Product Folder Links: MSP430FG4619 MSP430FG4618 MSP430FG4617 MSP430FG4616 MSP430CG4619 MSP430CG4618 MSP430CG4617 MSP430CG4616 Specifications Copyright © 2006–2020, Texas Instruments Incorporated (1) Lower 64KB or upper 64KB flash memory erased. (2) All flash memory erased. (3) The cumulative program time must not be exceeded during a block-write operation. This parameter is only relevant if the block write feature is used. (4) These values are hardwired into the flash controller state machine (tFTG = 1/fFTG). 5.45 Flash Memory (FG461x Devices Only) over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT VCC(PGM/ERASE) Program and erase supply voltage 2.7 3.6 V fFTG Flash timing generator frequency 257 476 kHz IPGM Supply current from DVCC during program 2.7 V, 3.6 V 3 5 mA IERASE Supply current from DVCC during erase (1) 2.7 V, 3.6 V 3 7 mA IGMERASE Supply current from DVCC during global mass erase (2) 2.7 V, 3.6 V 6 14 mA tCPT Cumulative program time (3) 2.7 V, 3.6 V 10 ms tCMErase Cumulative mass erase time 2.7 V, 3.6 V 20 ms Program and erase endurance 104 105 cycles tRetention Data retention duration TJ = 25°C 100 years tWord Word or byte program time (4) 30 tFTG tBlock, 0 Block program time for 1st byte or word 25 tBlock, 1-63 Block program time for each additional byte or word 18 tBlock, End Block program end-sequence wait time 6 tMass Erase Mass erase time 10593 tGlobal Mass Erase Global mass erase time 10593 tSeg Erase Segment erase time 4819 (1) fTCK may be restricted to meet the timing requirements of the module selected. (2) TMS, TDI/TCLK, and TCK pullup resistors are implemented in all versions. 5.46 JTAG Interface over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT fTCK TCK input frequency (1) 2.2 V 0 5 MHz 3 V 0 10 RInternal Internal pullup resistance on TMS, TCK, TDI/TCLK (2) 2.2 V, 3 V 25 60 90 k Ω (1) After the fuse is blown, no further access to the MSP430 JTAG/Test and emulation features is possible. The JTAG block is switched to bypass mode. 5.47 JTAG Fuse (1) over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN MAX UNIT VCC(FB) Supply voltage during fuse-blow condition TA = 25°C 2.5 V VFB Voltage level on TDI/TCLK for fuse-blow (FG461x) 6 7 V IFB Supply current into TDI/TCLK during fuse blow 100 mA tFB Time to blow fuse 1 ms |
Similar Part No. - MSP430FG4619_V01 |
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Similar Description - MSP430FG4619_V01 |
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