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OPA991 Datasheet(PDF) 28 Page - Texas Instruments

Part # OPA991
Description  OPAx991 40-V Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

OPA991 Datasheet(HTML) 28 Page - Texas Instruments

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Power-Supply
ESD Cell
100 Ÿ
100 Ÿ
VSS
VDD
IN±
IN+
+
±
R1
RS
RF
TVS
TVS
RL
VIN
+VS
±VS
OPAx990
ID
+
±
28
OPA991, OPA2991, OPA4991
SBOS969B – OCTOBER 2019 – REVISED MAY 2020
www.ti.com
Product Folder Links: OPA991 OPA2991 OPA4991
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Copyright © 2019–2020, Texas Instruments Incorporated
7.3.7 Electrical Overstress
Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress
(EOS). These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the
output pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown
characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin.
Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from
accidental ESD events both before and during product assembly.
Having a good understanding of this basic ESD circuitry and its relevance to an electrical overstress event is
helpful. Figure 51 shows an illustration of the ESD circuits contained in the OPAx991 (indicated by the dashed
line area). The ESD protection circuitry involves several current-steering diodes connected from the input and
output pins and routed back to the internal power-supply lines, where the diodes meet at an absorption device or
the power-supply ESD cell, internal to the operational amplifier. This protection circuitry is intended to remain
inactive during normal circuit operation.
Figure 51. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application
An ESD event is very short in duration and very high voltage (for example; 1 kV, 100 ns), whereas an EOS event
is long duration and lower voltage (for example; 50 V, 100 ms). The ESD diodes are designed for out-of-circuit
ESD protection (that is, during assembly, test, and storage of the device before being soldered to the PCB).
During an ESD event, the ESD signal is passed through the ESD steering diodes to an absorption circuit (labeled
ESD power-supply circuit). The ESD absorption circuit clamps the supplies to a safe level.
Although this behavior is necessary for out-of-circuit protection, excessive current and damage is caused if
activated in-circuit. A transient voltage suppressors (TVS) can be used to prevent against damage caused by
turning on the ESD absorption circuit during an in-circuit ESD event. Using the appropriate current limiting
resistors and TVS diodes allows for the use of device ESD diodes to protect against EOS events.


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