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TLP350 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP350 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TLP350 2003-10-27 3 Electrical Characteristics (Ta ==== −−−−40 to 100°C, unless otherwise specified) Characteristics Symbol Test Circuit Test Condition Min Typ.* Max Unit Forward voltage VF IF = 5 mA, Ta = 25°C 1.55 1.70 V Temperature coefficient of forward voltage ∆VF/∆Ta IF = 5 mA −2.0 mV/°C Input reverse current IR VR = 5 V, Ta = 25°C 10 µA Input capacitance CT V = 0 , f = 1 MHz,Ta = 25°C 45 pF IOPH1 V8-6 = 4.0 V −1.0 −1.5 “H” Level IOPH2 1 VCC = 30 V IF = 5 mA V8-6 = IOPL1 V6-5 = 2.0 V 1.0 2.0 Output current (Note 9) “L” Level IOPL2 2 VCC = 30 V IF = 0 mA V6-5 = A “H” Level VOH 3 IO = −100 mA, IF = 5 mA 11 Output voltage “L” Level VOL 4 VCC 1= +15 V VEE 1= -15 V IO = 100 mA, VF = 0.8 V 1.0 V “H” Level ICCH 5 IF = 10 mA 2.0 Supply current “L” Level ICCL 6 VCC = 30 V VO open IF = 0 mA 2.0 mA Threshold input current L → H IFLH VCC 1= +15 V VEE 1= -15 V, VO > 0 V 5 mA Threshold input voltage H → L VFHL VCC 1= +15 V VEE 1= -15 V, VO < 0 V 0.8 V Supply voltage VCC 15 30 V VUVLO+ 11.0 13.5 V UVLO thresh hold VUVLO- VO > 2.5 V , IF = 5 mA , IO=100 mA 9.5 12.0 V *: All typical values are at Ta = 25°C Note 9: Duration of IO time ≤ 50 µs Note 10: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest power consumption design. General precaution to static electricity (ESD) is necessary for handling this component. Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output CS V = 0,f = 1MHz (Note6) 0.8 pF Isolation resistance RS VS = 500 V, Ta = 25°C, R.H. ≤ 60% (Note6) 1×10 12 10 14 ― Ω AC,1 minute 3750 ― ― AC,1 second,in oil ― 10000 ― Vrms Isolation voltage BVS DC,1 minute,in oil ― 10000 ― Vdc |
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