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Specifications subject to change without notice. 5/03A

GaAs Hyperabrupt Junction

Varactor Diodes

Features

■ Constant Gamma of 1.0 and 1.25

■ Highly Linear Frequency Tuning

■ Constant Modulation Sensitivity

■ Lower Series Resistance and Higher Q in

Comparison to Equivalent Silicon

Hyperabrupt Varactors

GMV7811, GMV7821

GMV9801, GMV9821, GMV9822

Description

This series of GaAs hyperabrupt varactor diodes features

a constant gamma of 1.0 and 1.25, which allows for a

relatively linear frequency tuning for VCOs, modulators and

tunable filters. Varactors in this series are grown by MBE

(Molecular Beam Epitaxy), which allows monolayer

control of the doping profile.This translates to superb wafer-

to-wafer uniformity. The series resistance is lower, and Q

is higher when compared to an equivalent silicon

hyperabrupt varactor. These diodes are suited for

applications at X band frequencies and above, where wide

change in frequency is desired. However, in certain

applications the GaAs hyperabrupt varactor exhibits a

higher surface noise in comparison to an equivalent silicon

varactor.

0.026 (0.66 mm)

± 0.001 (0.025 mm)

0.013 (0.33 mm)

± 0.001 (0.025 mm)

0.005 (0.13 mm)

± 0.001 (0.025 mm)

0.013 (0.33 mm)

± 0.001 (0.025 mm)

0.004 (0.10 mm)

± 0.001 (0.025 mm)

MAX.

0.008 (0.20 mm)

± 0.001 (0.025 mm)

Outline Drawings

540-011

METALLIZED BACK

CONTACT GOLD

0.010 (0.25 mm)

± 0.001 (0.025 mm)

METALLIZED GOLD DOT

0.0011 (0.0279 mm)

MIN. DIA.

0.010 (0.25 mm)

± 0.001 (0.025 mm)

0.005 (0.13 mm) NOM.

150-808

Flip Chip

Chip

Characteristic

Value

18 V

100 mA

Power Dissipation at 25°C

250 mW

-55°C to +150°C

-65°C to +200°C

Absolute Maximum Ratings