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BF1207 Datasheet(PDF) 8 Page - NXP Semiconductors |
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BF1207 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 22 page 9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 8 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET (1) VG2-S =4V. (2) VG2-S = 3.5 V. (3) VG2-S =3V. (4) VG2-S = 2.5 V. (5) VG2-S =2V. (6) VG2-S = 1.5 V. (7) VG2-S =1V. VDS(A) =5V; Tj =25 °C. (1) RG1(A) =39kΩ. (2) RG1(A) =47kΩ. (3) RG1(A) =68kΩ. (4) RG1(A) =82kΩ. (5) RG1(A) = 100 kΩ. (6) RG1(A) = 120 kΩ. (7) RG1(A) = 150 kΩ. VG2-S =4V; Tj =25 °C. Fig 6. Amplifier A: forward transfer admittance as a function of drain current; typical values Fig 7. Amplifier A: drain current as a function of VDS and VGG; typical values VG2-S =4V, Tj =25 °C, RG1(B) =68kΩ (connected to ground); see Figure 3. Fig 8. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values ID (mA) 032 24 816 001aac884 20 10 30 40 yfs (mS) 0 (1) (2) (6) (7) (5) (4) (3) 001aac885 VGG = VDS (V) 06 4 2 ID (mA) (1) (2) (3) (4) (5) (7) 5 10 15 20 25 0 (6) Vsupply (V) 05 4 23 1 001aac886 8 12 4 16 20 ID (mA) 0 |
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