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NDS9945-NL Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Part No. NDS9945-NL
Description  Dual N-Channel 60 V (D-S) 175 °C MOSFET
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

NDS9945-NL Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes
a. Pulse test; pulse width
≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
60
-
-
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 60 V
-
-
1
μA
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
150
On-State Drain Current a
ID(on)
VGS = 10 V
VDS
≥ 5 V
20
-
-
A
Drain-Source On-State Resistance a
RDS(on)
VGS = 10 V
ID = 4.5 A-
0.028
0.040
Ω
VGS = 10 V
ID = 4.5 A, TJ = 125 °C
-
-
0.066
VGS = 10 V
ID = 4.5 A, TJ = 175 °C
-
-
0.081
VGS = 4.5 V
ID = 4 A-
0.030
0.055
Forward Transconductance f
gfs
VDS = 15 V, ID = 4.5 A
-
15
-
S
Dynamic b
Input Capacitance
Ciss
VGS = 0 V
VDS = 25 V, f = 1 MHz
-
600
750
pF
Output Capacitance
Coss
-
110
140
Reverse Transfer Capacitance
Crss
-50
62
Total Gate Charge c
Qg
VGS = 10 V
VDS = 30 V, ID = 5.3 A
-11.7
18
nC
Gate-Source Charge c
Qgs
-1.8
2.7
Gate-Drain Charge c
Qgd
-2.8
4.2
Gate Resistance
Rg
f = 1 MHz
1.3
-
6
Ω
Turn-On Delay Time c
td(on)
VDD = 30 V, RL = 6.8
Ω
ID
≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω
-7
11
ns
Rise Time c
tr
-3.3
5
Turn-Off Delay Time c
td(off)
-
22.4
33.5
Fall Time c
tf
-2.1
3.2
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
--
28
A
Forward Voltage
VSD
IF = 2 A, VGS = 0 V
-
0.75
1.1
V
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
NDS9945-NL
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