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FM540-B Datasheet(PDF) 1 Page - Formosa MS

Part # FM540-B
Description  Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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Manufacturer  FORMOSA [Formosa MS]
Direct Link  http://www.formosams.com
Logo FORMOSA - Formosa MS

FM540-B Datasheet(HTML) 1 Page - Formosa MS

  FM540-B Datasheet HTML 1Page - Formosa MS FM540-B Datasheet HTML 2Page - Formosa MS  
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FM520-B THRU FM5100-B
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00878 ounce, 0.293 gram
(V)
(V)
(V)
(V)
(
oC)
FM520-B
SS52
20
14
20
FM530-B
SS53
30
21
30
FM540-B
SS54
40
28
40
FM550-B
SS55
50
35
50
FM560-B
SS56
60
42
60
FM580-B
SS58
80
56
80
FM5100-B
S510
100
70
100
-55 to +150
0.70
0.85
Operating
temperature
VF
*4
SYMBOLS
MARKING
CODE
0.55
-55 to +125
VRRM
*1
VRMS
*2
VR
*3
MAXIMUM RATINGS (AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
5.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
150
A
VR = VRRM TA =
25
oC
0.5
mA
VR = VRRM TA = 125
oC
50
mA
Thermal resistance
Junction to lead
RqJL
12
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
380
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.213(5.4)
0.197(5.0)
0.016(0.4) Typ.
0.142(3.6)
0.126(3.2)
0.173(4.4)
0.157(4.0)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMB


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