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STF6N60M2 Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part # STF6N60M2
Description  N-Channel 650V (D-S) Power MOSFET
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

STF6N60M2 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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Power MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25
Ω, IAS = 3.5 A.
c. 1.6 mm from case.
d. ISD
≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
PRODUCT SUMMARY
VDS (V) at TJ max.
0
RDS(on) max. at 25 °C (
Ω)VGS = 10 V
1.
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
Single
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
±30
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
ID
A
TC = 100 °C
Pulsed Drain Current a
IDM
Linear Derating Factor
W/°C
Single Pulse Avalanche Energy b
EAS
mJ
Maximum Power Dissipation
PD
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Drain-Source Voltage Slope
TJ = 125 °C
dV/dt
V/ns
Reverse Diode dV/dt d
Soldering Recommendations (Peak Temperature) c
for 10 s
300
°C
S
N-Channel MOSFET
G
D
TO-220AB
Top View
GD S
G D S
TO-220 FULLPAK
TO-252
GD
S
Top View
TO-251
G
D
S
Top View
Top View
1
7.0
5.6
28
STF6N60M2
1
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw


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