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M36D0R6040T0ZAIF Datasheet(PDF) 4 Page - STMicroelectronics

Part # M36D0R6040T0ZAIF
Description  64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M36D0R6040T0ZAIF Datasheet(HTML) 4 Page - STMicroelectronics

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M36D0R6040T0, M36D0R6040B0
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SUMMARY DESCRIPTION
The M36D0R6040T0 and M36D0R6040B0 com-
bine two memory devices in a Multi-Chip Package:
a 64-Mbit, Multiple Bank Flash memory, the
M58WR064FT/B, and a 16-Mbit Pseudo SRAM,
the M69AR024B. Recommended operating condi-
tions do not allow more than one memory to be ac-
tive at the same time.
The memory is offered in a Stacked TFBGA67
(12 x 8mm, 8x8 ball array, 0.8mm pitch) package.
In addition to the standard version, the packages
are also available in Lead-free version, in compli-
ance with JEDEC Std J-STD-020B, the ST ECO-
PACK 7191395 Specification, and the RoHS
(Restriction of Hazardous Substances) directive.
All packages are compliant with Lead-free solder-
ing processes.
The memory is supplied with all the bits erased
(set to ‘1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI09200
22
A0-A21
DQ0-DQ15
M36D0R6040T
M36D0R6040B
GF
16
WF
RPF
WPF
E1P
GP
WP
UBP
LBP
VSS
VDDF
VPPF
VDDP
EF
E2P
A0-A19
Common Address Inputs
DQ0-DQ15
Common Data Input/Output
VDDF
Flash Memory Power Supply
VPPF
Common Flash Optional Supply
Voltage for Fast Program & Erase
VSS
Ground
VDDP
PSRAM Power Supply
NC
Not Connected Internally
Flash Memory Signals
A21-A20
Address Inputs for the Flash memory
only
EF
Chip Enable input
GF
Output Enable input
WF
Write Enable input
RPF
Reset input
WPF
Write Protect input
PSRAM Signals
E1P
Chip Enable input
GP
Output Enable input
WP
Write Enable input
E2P
Power-down input
UBP
Upper Byte Enable input
LBP
Lower Byte Enable input


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