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FRA806G Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # FRA806G
Description  8.0 AMPS. Glass Passivated Fast Recovery Rectifiers
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

FRA806G Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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RATINGS AND CHARACTERISTIC CURVES (FRA801G THRU FRA807G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
W
NONINDUCTIVE
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10
W
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
0
50
100
150
0
2
4
6
8
10
CASE TEMPERATURE. ( C)
o
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
1
2
5
10
20
100
50
25
100
125
150
75
50
NUMBER OF CYCLES AT 60Hz
TJ=125 C
0
8.3ms Single Half Sine Wave
JEDEC Method
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
0.2
0.4
1
2
4
10
100
20
40
200
400
INSTANTANEOUS FORWARD VOLTAGE. (V)
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
o
FIG.6- TYPICAL REVERSE CHARACTERISTICS
0
20
40
60
80
100
120
140
0.1
0.2
0.4
1
2
4
10
40
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=25 C
0
Tj=125 C
0
Tj=75 C
0
FIG.4- TYPICAL JUNCTION CAPACITANCE
0.1
0.5
1
5
10
50
100
500
1000
20
40
60
80
100
120
REVERSE VOLTAGE. (V)
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
0
0
0


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