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MGP4N60E Datasheet(PDF) 4 Page - ON Semiconductor

Part # MGP4N60E
Description  Insulated Gate Bipolar Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MGP4N60E Datasheet(HTML) 4 Page - ON Semiconductor

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MGP4N60E
4
Motorola IGBT Device Data
Figure 7. Turn–Off Losses versus
Gate Resistance
Figure 8. Turn–Off Losses versus
Junction Temperature
Figure 9. Turn–Off Losses versus
Collector Current
Figure 10. Reverse Biased Safe
Operating Area
45
5
RG, GATE RESISTANCE (OHMS)
0.2
0.1
TJ, JUNCTION TEMPERATURE (°C)
150
–50
0.05
0
23
0
IC, COLLECTOR CURRENT (AMPS)
0.10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1
10
1
0
15
25
–25
0
25
0.10
0.20
1
10
100
1000
35
0.15
50
75
100
125
0.15
0.05
0.20
TJ = 125°C
VDD = 360 V
VGE = 15 V
IC = 3.0 A
2.0 A
1.0 A
VCC = 360 V
VGE = 15 V
RG = 20 W
IC = 3.0 A
2.0 A
1.5 A
TJ = 125°C
VCC = 360 V
VGE = 15 V
RG = 20 W
TJ = 125°C
RGE = 20 W
VGE = 15 V


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