Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR TRANSISTORS

CL 100, A, B

CK 100, A, B

TO-39

Metal Can Package

CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range

Of Medium Voltage And Current Amplifier Applications.

Complementary CK100, A, B

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

Collector -Emitter Voltage

50

V

Collector -Base Voltage

60

V

Emitter Base Voltage

5V

Collector Current-Continuous

1A

Power Dissipation @ Ta=25ºC

800

mW

Derate above 25ºC

5.33

mW /°C

Total device dissipation @ Tc=25ºC

3

W

Derate above 25ºC

20

mW /°C

Operating And Storage Junction

-55 to +175

°C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Breakdown Voltage

50

V

Collector Base Breakdown Voltage

60

V

Emitter Base Breakdown Voltage

5V

Collector Leakage Current

50

nA

Emitter Leakage Current

1

µA

DC Current Gain

40

300

Base Emitter On Voltage

0.9

V

Collector Emitter (Sat) Voltage

0.6

V

CLASSIFICATION

A

B

HFE

40-120

100-300

*Pulse Condition : PW <300us, Duty Cycle < 2%

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

Data Sheet

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