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SI4943BDY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4943BDY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si4943BDY Vishay Siliconix New Product www.vishay.com 2 Document Number: 73073 S-41527—Rev. A, 16-Aug-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −1 −3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V, TJ = 55_C −5 mA On-State Drain Currenta ID(on) VDS = −5 V, VGS = −10 V −30 A Drain Source On State Resistancea rDS( ) VGS = −10 V, ID = −8.4 A 0.016 0.019 W Drain-Source On-State Resistancea rDS(on) VGS = −4.5 V, ID = −6.7 A 0.026 0.031 W Forward Transconductancea gfs VDS = −10 V, ID = −8.4 A 20 S Diode Forward Voltagea VSD IS = −1.7 A, VGS = 0 V −0.75 −1.2 V Dynamicb Total Gate Charge Qg 17 25 Gate-Source Charge Qgs VDS = −10 V, VGS = −5 V, ID = −8.4 A 5 nC Gate-Drain Charge Qgd 6.7 Gate Resistance Rg f = 1 MHz 6 12 18 W Turn-On Delay Time td(on) 11 17 Rise Time tr VDD = −10 V, RL = 10 W 10 15 Turn-Off Delay Time td(off) VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W 94 140 ns Fall Time tf 60 90 Source-Drain Reverse Recovery Time trr IF = −1.7 A, di/dt = 100 A/ms 55 80 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 6 12 18 24 30 0 1234 5 VGS = 10 thru 5 V TC = 125_C −55_C 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 3 V 4 V |
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