SI4943BDY-T1-E3 datasheet(4/5 Pages) VISHAY

Part #	SI4943BDY-T1-E3

Description	Dual P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4943BDY

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Document Number: 73073

S-41527—Rev. A, 16-Aug-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

30

50

10

20

Single Pulse Power

Time (sec)

40

10−3

10−2

1

10

600

10−1

10−4

100

−0.4

−0.2

0.0

0.2

0.4

0.6

0.8

−50

−25

0

25

50

75

100

125

150

ID = 250 mA

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Threshold Voltage

TJ − Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 80_C/W

3. TJM − TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

1

100

600

10

10−1

10−2

Safe Operating Area, Junction-to-Ambient

VDS − Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

TA = 25_C

Single Pulse

0.1

IDM Limited

ID(on)

Limited

rDS(on) Limited

BVDSS Limited

1 ms

10 ms

100 ms

dc

1 s

10 s

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SI4943BDY-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix

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