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TM497BBK32S Datasheet(PDF) 6 Page - Texas Instruments |
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TM497BBK32S Datasheet(HTML) 6 Page - Texas Instruments |
6 / 9 page TM497BBK32, TM497BBK32S 4194304 BY 32-BIT DYNAMIC RAM MODULE SMMS433B – JANUARY 1993 – REVISED JUNE 1995 6 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 capacitance over recommended ranges of supply voltage and operating free-air temperature, f = 1 MHz (see Note 5) PARAMETER MIN MAX UNIT Ci(A) Input capacitance, address inputs 40 pF Ci(R) Input capacitance, RAS inputs 28 pF Ci(C) Input capacitance, CAS inputs 14 pF Ci(W) Input capacitance, write-enable input 56 pF Co(DQ) Output capacitance on DQ pins 7 pF NOTE 5: VCC = 5 V ± 0.5 V, and the bias on pins under test is 0 V. switching characteristics over recommended ranges of supply voltage and operating free-air temperature PARAMETER ’497BBK32-60 ’497BBK32-70 ’497BBK32-80 UNIT PARAMETER MIN MAX MIN MAX MIN MAX UNIT tAA Access time from column address 30 35 40 ns tCAC Access time from CAS low 15 18 20 ns tCPA Access time from column precharge 35 40 45 ns tRAC Access time from RAS low 60 70 80 ns tCLZ CAS to output in low-impedance state 0 0 0 ns tOH Output disable time from start of CAS high 3 3 3 ns tOFF Output disable time after CAS high (see Note 6) 0 15 0 18 0 20 ns NOTE 6: tOFF is specified when the output is no longer driven. timing requirements over recommended ranges of supply voltage and operating free-air temperature ’497BBK32-60 ’497BBK32-70 ’497BBK32-80 UNIT MIN MAX MIN MAX MIN MAX UNIT tRC Cycle time, random read or write (see Note 7) 110 130 150 ns tPC Cycle time, page-mode read or write (see Notes 7 and 8) 40 45 50 ns tRASP Pulse duration, page-mode, RAS low 60 100 000 70 100 000 80 100 000 ns tRAS Pulse duration, non-page-mode, RAS low 60 10 000 70 10 000 80 10 000 ns tCAS Pulse duration, CAS low 15 10 000 18 10 000 20 10 000 ns tCP Pulse duration, CAS high 10 10 10 ns tRP Pulse duration, RAS high (precharge) 40 50 60 ns tWP Pulse duration, W low 10 10 10 ns tASC Setup time, column address before CAS low 0 0 0 ns tASR Setup time, row address before RAS low 0 0 0 ns tDS Setup time, data before CAS low 0 0 0 ns tRCS Setup time, W high before CAS low 0 0 0 ns tCWL Setup time, W-low before CAS high 15 18 20 ns tRWL Setup time, W-low before RAS high 15 18 20 ns tWCS Setup time, W-low before CAS low 0 0 0 ns tWRP Setup time, W-high before RAS low (CBR refresh only) 10 10 10 ns NOTES: 7. All cycles assume tT = 5 ns. 8. To assure tPC min, tASC should be ≥ tCP. |
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