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Q67040-S4650 Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # Q67040-S4650
Description  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

Q67040-S4650 Datasheet(HTML) 8 Page - Infineon Technologies AG

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IHP10T120
Soft Switching Series
Power Semiconductors
8
Rev. 2 Jun-04
5A
10A
15A
0,0mJ
2,0mJ
4,0mJ
6,0mJ
E
ts*
E
off
*) E
on and Etsinclude losses
due to diode recovery
E
on*
5Ω
50Ω
100Ω
150Ω
200Ω
0,0 mJ
0,4 mJ
0,8 mJ
1,2 mJ
1,6 mJ
2,0 mJ
2,4 mJ
2,8 mJ
3,2 mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C, VCE=600V,
VGE=0/15V, RG=81Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C, VCE=600V,
VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
50°C
100°C
150°C
0,0mJ
0,5mJ
1,0mJ
1,5mJ
2,0mJ
2,5mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
400V
500V
600V
700V
800V
0mJ
1mJ
2mJ
3mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE=600V, VGE=0/15V, IC=8A,
RG=81Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter voltage
(inductive load, TJ=150°C, VGE=0/15V, IC=8A,
RG=81Ω,
Dynamic test circuit in Figure E)


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