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AS7C251MNTF18A-85TQIN Datasheet(PDF) 1 Page - Alliance Semiconductor Corporation

Part # AS7C251MNTF18A-85TQIN
Description  2.5V 1M x 18 Flowthrough Synchronous SRAM with NTD
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C251MNTF18A-85TQIN Datasheet(HTML) 1 Page - Alliance Semiconductor Corporation

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December 2004
Copyright © Alliance Semiconductor. All rights reserved.
®
AS7C251MNTF18A
12/23/04, v 1.1
Alliance Semiconductor
P. 1 of 18
2.5V 1M x 18 Flowthrough Synchronous SRAM with NTDTM
Features
• Organization: 1,048,576 words × 18 bits
•NTD™ architecture for efficient bus operation
• Fast clock to data access: 7.5/8.5/10 ns
•Fast OE access time: 3.5/4.0 ns
• Fully synchronous operation
• Flow-through mode
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Individual byte write and global write
• Clock enable for operation hold
• Multiple chip enables for easy expansion
• 2.5V core power supply
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
Logic block diagram
Selection guide
-75
-85
-10
Units
Minimum cycle time
8.5
10
12
ns
Maximum clock access time
7.5
8.5
10
ns
Maximum operating current
275
250
230
mA
Maximum standby current
90
80
80
mA
Maximum CMOS standby current (DC)
60
60
60
mA
Address
D
Q
CLK
register
Output
buffer
DQ [a,b]
20
20
CLK
CE0
CE1
CE2
A[19:0]
OE
CEN
Control
CLK
logic
Data
D
Q
CLK
input
register
18
18
OE
1M x 18
SRAM
array
R/W
DQ [a,b]
BWa
BWb
CLK
Q
D
ADV / LD
LBO
burst logic
addr. registers
Write delay
20
ZZ
CLK
18
18
18
18


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