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AS7C3364NTF32B-75TQC Datasheet(PDF) 7 Page - Alliance Semiconductor Corporation

Part # AS7C3364NTF32B-75TQC
Description  3.3V 64K x 32/36 Flowthrough Synchronous SRAM with NTD
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C3364NTF32B-75TQC Datasheet(HTML) 7 Page - Alliance Semiconductor Corporation

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AS7C3364NTF32B/36B
4/28/05, v 1.0
Alliance Semiconductor
P. 7 of 19
State diagram for NTD SRAM
Absolute maximum ratings
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
*V
DDQ cannot be greater than VDD
Recommended operating conditions at 2.5V I/O
*V
DDQ cannot be greater than VDD
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
VDD, VDDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
VIN
–0.5
VDD + 0.5
V
Input voltage relative to GND (I/O pins)
VIN
–0.5
VDDQ + 0.5
V
Power dissipation
Pd
–1.8
W
Short circuit output current
IOUT
20
mA
Storage temperature
Tstg
–65
+150
oC
Temperature under bias
Tbias
–65
+135
oC
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ*
3.135
3.3
VDD
V
Ground supply
Vss
0
0
0
V
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ*
2.375
2.5
VDD
V
Ground supply
Vss
0
0
0
V
Dsel
Read
Burst
Burst
Read
Writ
Burs
Dsel
Read
Burst
Write
Dse
l
Wri
te
Burst
Dsel
Burst
Burst
Write
Read


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