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AS7C3364NTF32B-75TQI Datasheet(PDF) 9 Page - Alliance Semiconductor Corporation

Part # AS7C3364NTF32B-75TQI
Description  3.3V 64K x 32/36 Flowthrough Synchronous SRAM with NTD
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C3364NTF32B-75TQI Datasheet(HTML) 9 Page - Alliance Semiconductor Corporation

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AS7C3364NTF32B/36B
4/28/05, v 1.0
Alliance Semiconductor
P. 9 of 19
Timing characteristics over operating range
Snooze Mode Electrical Characteristics
Parameter
Sym
-75
-80
-10
Unit
Notes1
1
See “Notes” on page 15.
Min
Max
Min
Max
Min
Max
Cycle time
tCYC
8.5
10
12
ns
Clock access time
tCD
7.5
8.0
10
ns
Output enable low to data valid
tOE
3.5
4.0
4.0
ns
Clock high to output low Z
tLZC
2.5
2.5
2.5
ns
2,3,4
Data Output invalid from clock high
tOH
2.5
2.5
2.5
ns
2
Output enable low to output low Z
tLZOE
0
0
0
ns
2,3,4
Output enable high to output high Z
tHZOE
3.5
4.0
4.0
ns
2,3,4
Clock high to output high Z
tHZC
3.5
4.0
4.0
ns
2,3,4
Clock high pulse width
tCH
3.0
4.0
4.0
ns
5
Clock low pulse width
tCL
3.0
4.0
4.0
ns
5
Address and Control setup to clock high
tAS
2.0
2.0
2.0
ns
6
Data setup to clock high
tDS
2.0
2.0
2.0
ns
6
Write setup to clock high
tWS
2.0
2.0
2.0
ns
6, 7
Chip select setup to clock high
tCSS
2.0
2.0
2.0
ns
6, 8
Address hold from clock high
tAH
0.5
0.5
0.5
ns
6
Data hold from clock high
tDH
0.5
0.5
0.5
ns
6
Write hold from clock high
tWH
0.5
0.5
0.5
ns
6, 7
Chip select hold from clock high
tCSH
0.5
0.5
0.5
ns
6, 8
Clock enable setup to clock high
tCENS
2.0
2.0
2.0
ns
6
Clock enable hold from clock high
tCENH
0.5
0.5
0.5
ns
6
ADV setup to clock high
tADVS
2.0
2.0
2.0
ns
6
ADV hold from clock high
tADVH
0.5
0.5
0.5
ns
6
Description
Conditions
Symbol
Min
Max
Units
Current during Snooze Mode
ZZ > VIH
ISB2
30
mA
ZZ active to input ignored
tPDS
2cycle
ZZ inactive to input sampled
tPUS
2cycle
ZZ active to SNOOZE current
tZZI
2cycle
ZZ inactive to exit SNOOZE current
tRZZI
0cycle


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