AS7C25512FT32A-85TQIN datasheet(9/19 Pages) ALSC

Part #	AS7C25512FT32A-85TQIN

Description	2.5V 512K x 32/36 flowthrough burst synchronous SRAM

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Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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9 / 19 page

12/23/04, v. 1.2

Alliance Semiconductor

9 of 19

AS7C25512FT32A

AS7C25512FT36A

®

DC electrical characteristics

† LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10

µA.

*VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC

**VIL min = -1.5 for pulse width less than 0.2 X tCYC

IDD operating conditions and maximum limits

Parameter

Sym

Conditions

Min

Max

Unit

Input leakage current†

|ILI|VDD = Max, 0V < VIN < VDD

-2

2

µA

Output leakage current

|ILO|OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ

-2

2

µA

Input high (logic 1) voltage

VIH

Address and control pins

1.7*

VDD+0.3

V

I/O pins

1.7*

VDDQ+0.3

V

Input low (logic 0) voltage

VIL

Address and control pins

-0.3**

0.7

V

I/O pins

-0.3**

0.7

V

Output high voltage

VOH

IOH = –4 mA, VDDQ = 2.375V

1.7

–

V

Output low voltage

VOL

IOL = 8 mA, VDDQ = 2.625V

–

0.7

V

Parameter

Sym

Conditions

-75

-85

-10

Unit

Operating power supply current1

1 ICC given with no output loading. ICC increases with faster cycle times and greater output loading.

ICC

CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax,

IOUT = 0 mA, ZZ < VIL

275

250

230

mA

Standby power supply current

ISB

All VIN ≤ 0.2V or > VDD – 0.2V, Deselected,

f = fMax, ZZ < VIL

90

80

mA

ISB1

Deselected, f = 0, ZZ

< 0.2V,

all VIN ≤ 0.2V or ≥ VDD – 0.2V

60

ISB2

Deselected, f = fMax, ZZ ≥ VDD – 0.2V,

all VIN ≤ VIL or ≥ VIH

50

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AS7C25512FT32A-85TQIN Datasheet(PDF) 9 Page - Alliance Semiconductor Corporation

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