®

AS7C3513B

3/24/04, v.1.2

Alliance Semiconductor

P. 7 of 10

AC test conditions

Notes

2

This parameter is sampled, but not 100% tested.

3

For test conditions, see AC Test Conditions, Figures A and B.

4

5

This parameter is guaranteed, but not 100% tested.

6WE is High for read cycle.

7CE and OE are Low for read cycle.

8

Address valid prior to or coincident with CE transition Low.

9

All read cycle timings are referenced from the last valid address to the first transitioning address.

10 Not applicable.

11

All write cycle timings are referenced from the last valid address to the first transitioning address.

12 Not applicable.

13 C=30pF, except on High Z and Low Z parameters, where C=5pF.

350

Ω

320

Ω

GND

+3.3V

Figure B: 3.3V Output load

- Output load: see Figure B.

- Input pulse level: GND to 3.0V. See Figure A.

- Input rise and fall times: 2 ns. See Figure A.

- Input and output timing reference levels: 1.5V.

168

Ω

Thevenin equivalent:

+1.728V

10%

90%

10%

90%

GND

+3.0V

Figure A: Input pulse

2 ns