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WSF15N10A Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF15N10A Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 5 page  Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=5A --- 90 110 mΩ VGS=4.5V , ID=2A --- 110 150 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID=5A 3.5 --- --- S Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=5A --- 21.5 --- nC Qgs Gate-Source Charge --- 3.2 --- Qgd Gate-Drain Charge --- 6.0 --- Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=6Ω ID=1A , RL=30Ω --- 11 24 ns Tr Rise Time --- 7.4 15 Td(off) Turn-Off Delay Time --- 35 45 Tf Fall Time --- 9.1 12 Ciss Input Capacitance VDS=30V , VGS=0V , f=1MHz --- 730 pF Coss Output Capacitance --- 37 Crss Reverse Transfer Capacitance --- 27 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 10 A VSD Diode Forward Voltage2 VGS=0V , IS=10A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , TJ=25℃ 17 21 61 nS Qrr Reverse Recovery Charge 61 97 113 nC Diode Characteristics Electrical Characteristics (TJ=25 ℃, unless otherwise noted) N-Ch MOSFET Page 2 www.winsok.tw Dec.2014 WSF15N10A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25 --- --- --- |
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