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AS9C25512M2018L-250BC Datasheet(PDF) 9 Page - Alliance Semiconductor Corporation

Part # AS9C25512M2018L-250BC
Description  2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS9C25512M2018L-250BC Datasheet(HTML) 9 Page - Alliance Semiconductor Corporation

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AS9C25512M2018L
AS9C25256M2018L
9/24/04, v.1.2
Alliance Semiconductor
P. 9 of 30
®
Package Thermal Resistance
Notes:
1. This parameter is sampled.
Capacitance[1] (TA = +25 °C, F = 1.0 Mhz)[2]
Notes:
1. Sampled, not 100% tested
2. TA stands for 'Ambient temperature'.
3. L = 0V; H = 3V
Absolute maximum ratings[1]
Notes:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating for extended
periods may affect reliability.
Description
Conditions
Symbol
Typical
Units
Thermal Resistance (junction to
ambient)[1]
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51
BGA
θJA
TBD
°C/W
fpBGA
θJA
TBD
°C/W
TQFP
θJA
TBD
°C/W
Thermal Resistance (junction to
top of case)[1]
θJC
TBD
°C/W
Parameter
Symbol
Signals
Test Condition[3]
BGA
(Max)
fpBGA
(Max)
TQFP
(Max)
Unit
Input Capacitance
CIN
Address and
Control pins
VIN = L to H or H to L
TBD
TBD
TBD
pF
Output Capacitance
COUT
Flag Output pins VOUT = L to H or H to L
TBD
TBD
TBD
pF
I/O Capacitance
CI/O
I/O pins
VI/O = L to H or H to L
TBD
TBD
TBD
pF
Rating
Parameter
Symbol
Min
Max
Unit
Core supply voltage relative to VSS
VDD
-0.5
3.6
V
I/O supply voltage relative to VSS
VDDQ
-0.3
3.9
V
Input and I/O voltage relative to VSS
VIN
-0.3
VDDQ + 0.3
V
Power Dissipation
PD
-TBD
W
Short circuit output current
IOUT
-TBD
mA
Storage Temperature
TSTG
-65
150
°C
Storage Temperature under Bias
TBIAS
-55
125
°C
Junction Temperature
TJN
-TBD
°C


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