®

AS7C34096A

8/17/04, v. 2.1

Alliance Semiconductor

P. 2 of 9

Functional description

The AS7C34096A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as

524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are

desired.

ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory

systems.

When CE is high the device enters standby mode. The device is guaranteed not to exceed 28.8mW power consumption in

CMOS standby mode.

A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O8 is written

on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins

only after outputs have been disabled with output enable (OE) or write enable (WE).

A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip

drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write

enable is active, output drivers stay in high-impedance mode.

All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3V supply voltage. This device is available as

per industry standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.

NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func-

tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect reliability.

Key: X = Don’t care, L = Low, H = High

Absolute maximum ratings

Parameter

Symbol

Min

Max

Unit

–0.5

+5.0

V

Voltage on any pin relative to GND

–0.5

V

Power dissipation

–1.0

W

Storage temperature (plastic)

–65

+150

°C

–55

+125

°C

DC current into output (low)

–20

mA

Truth table

CE

WE

OE

Data

Mode

H

X

X

High Z

L

H

H

High Z

LH

L

LL

X