MMBF5460LT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1000

0.1

0.2

ID, DRAIN CURRENT (mA)

Figure 7. Output Resistance

versus Drain Current

10

0.5

1.0

2.0

5.0

10

10

0

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 8. Capacitance versus

Drain–Source Voltage

0

5.0

10

f, FREQUENCY (Hz)

Figure 9. Noise Figure versus Frequency

0

10

RS, SOURCE RESISTANCE (k Ohms)

Figure 10. Noise Figure versus

Source Resistance

0

Figure 11. Equivalent Low Frequency Circuit

20

30

50

70

100

200

300

500

700

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10

20

30

40

4.0

3.0

2.0

1.0

20 30 50

100

200 300 500

1000 2000 3000

10,000

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

1.0

10

100

1000

10,000

NOTE:

1. Graphical data is presented for dc conditions. Tabular

data is given for pulsed conditions (Pulse Width = 630 ms,

Duty Cycle = 10%).

*Cosp is Coss in parallel with Series Combination of Ciss and Crss.

vi

Crss

Ciss

ross

Coss

| yfs | vi

COMMON SOURCE

y PARAMETERS FOR FREQUENCIES

BELOW 30 MHz

yis = jω Ciss

yos = jω Cosp * + 1/ross

yfs = yfs |

yrs = –jω Crss

VDS = 15 V

f = 1.0 kHz

IDSS = 3.0 mA

6.0 mA

10 mA

f = 1.0 MHz

VGS = 0

Ciss

Coss

Crss

VDS = 15 V

VGS = 0

RG = 1.0 Megohm

VDS = 15 V

VGS = 0

f = 100 Hz