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ASM3P2821B Datasheet(PDF) 3 Page - Alliance Semiconductor Corporation |
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ASM3P2821B Datasheet(HTML) 3 Page - Alliance Semiconductor Corporation |
3 / 7 page ASM3P2821B Low Power EMI Reduction IC 3 of 7 Notice: The information in this document is subject to change without notice. Absolute Maximum Ratings Symbol Parameter Rating Unit VDD, VIN Voltage on any pin with respect to GND -0.5 to + 7.0 V TSTG Storage temperature -65 to +125 °C TA Operating temperature 0 to 70 °C Note: These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. DC Electrical Characteristics Symbol Parameter Min Typ Max Unit VIL Input low voltage GND – 0.3 - TBD V VIH Input high voltage TBD - VDD + 0.3 V IIL Input low current TBD µA IIH Input high current TBD µA VOL Output low voltage (VDD = 3.3V, IOL = 4mA) TBD V VOH Output high voltage (VDD = 3.3V, IOH = 4mA) TBD V ICC Dynamic supply current normal mode (3.3V and 10pF loading) TBD mA IDD Static supply current standby mode TBD µA VDD Operating voltage TBD 3.3 TBD V tON Power up time (first locked clock cycle after power up) - TBD - mS ZOUT Clock out impedance - TBD - Ω |
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