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TLN227F Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLN227F Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page TLN227(F) 2004-01-06 1 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN227(F) Lead Free Product For Space−Optical−Transmission • High radiant power: Po = 18mW (typ.) at IF = 50mA • Wide half−angle value: = θ1 / 2 ± 21° (typ.) • High−speed response: tr, tf = 30ns (typ.) • Light source for remote control • Designed for transmission of wireless AVsignals purpose. • Designed for high−speed data transmission Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 100 mA Pulse forward current IFP 1000 (Note 1) mA Power dissipation PD 220 mW Reverse voltage VR 4 V Operating temperature Topr −25~85 °C Storage temperature Tstg −30~100 °C Soldering temperature (5s) Tsol 260 °C (Note 1): Frequency = 100kHz, duty = 1% Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 100mA ― 1.8 2.2 V Reverse current IR VR = 4V ― ― 60 µA Radiant power PO IF = 50mA 14 18 ― mW Radiant intensity IE IF = 50mA ― 100 ― mW / sr Rise time, fall time tr, tf IFP = 100mA, PW = 100ns ― 30 ― ns Cut −off frequency (Note 2) fc IF = 50mADC + 5mAp−p 10 15 ― MHz Capacitance CT VR = 0, f = 1MHz ― 110 ― pF Peak emission wavelength λP IF = 50mA 830 870 900 nm Spectral line half width ∆λ IF = 50mA ― 50 ― nm Half value angle θ 2 1 IF = 50mA ― ±5 ― ° (Note 2): Frequency when modulation light power decreases by 3dB from 1 MHz. Unit: mm TOSHIBA 4-6J1 Pin Connection 1. Anode 2. Cathode 12 |
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