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KFG2816U1M-PED Datasheet(PDF) 3 Page - Samsung semiconductor |
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KFG2816U1M-PED Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 87 page OneNAND128 FLASH MEMORY 3 Document Title OneNAND Revision History The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. Revision No. 0.0 0.1 1.0 Remark Advance Advance Draft Date Sep. 9, 2004 Oct. 28, 2004 Jun. 15, 2005 History 1. Initial Issue. 1. Corrected the errata 2. Revised Cold Reset 3. Added TSOP1 Package Information 4. Revised FBGA package type 5. Added 67FBGA Package Information 6. Revised typical tOTP, tLOCK from 300us to 600us 7. Revised max tOTP, tLOCK from 600us to 1000us 8. Deleted Lock All Block, Lock-Tight All Block Operation 9. Added Endurance and Data Retention 10. Revised Load Data into Buffer Operation Sequence 11. Revised Warm Reset 12. Revised Programmable Burst Read Latency Timing Diagram 13. Revised Multi Block Erase Flow Chart 14. Revised Extended Operating Temperature 1. Added Copyright Notice in the beginning 2. Corrected Errata 3. Updated Icc2, Icc4, Icc5, Icc6 and ISB 4. Revised INT pin description 5. Added OTP erase case NOTE 6. Revised case definitions of Interrupt Status Register 7. Added a NOTE to Command register 8. Added ECClogSector Information table 9. Removed ’data unit based data handling’ from description of Device Operation 10. Revised description on Warm/Hot/NAND Flash Core Reset 11. Revised Warm Reset Timing 12. Revised description for 4-, 8-, 16-, 32-Word Linear Burst Mode 13. Revised OTP operation description 14. Added note for OTP L in Internal Register Reset 15. Removed all block lock default case after cold or warm reset 16. Added explanation for each prohibited case in protect mode 17. Revised the case of writing other commands during Multi Block Erase routine 18. Added note for Erase Suspend/Resume 19. Added supplemental explanation for ECC Operation 20. Removed classification of ECC error from ECC Operation 21. Removed redundant sentance from ECC Bypass Operation 22. Added technical note for Boot Sequence 23. Added technical note for INT pin connection guide 24. Excluded tOEH from Asynchronous Read Table 25. Revised Asycnchronous Read timing diagram for CE don’t care mode 26. Revised Asynchronous Write timing diagram for CE don’t care mode 27. Revised Load operation timing diagram for CE don’t care mode |
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