MMBT6517LT1 datasheet(2/8 Pages) ONSEMI

Part #	MMBT6517LT1

Description	High Voltage Transistor(NPN Silicon)

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MMBT6517LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 30 mAdc, VCE = 10 Vdc)

(IC = 50 mAdc, VCE = 10 Vdc)

(IC = 100 mAdc, VCE = 10 Vdc)

hFE

20

30

20

15

—

200

—

Collector–Emitter Saturation Voltage (3)

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

—

0.30

0.35

0.50

1.0

Vdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

VBE(sat)

—

0.75

0.85

0.90

Vdc

Base–Emitter On Voltage

(IC = 100 mAdc, VCE = 10 Vdc)

VBE(on)

—

2.0

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)

fT

40

200

MHz

Collector–Base Capacitance

(VCB = 20 Vdc, f = 1.0 MHz)

Ccb

—

6.0

pF

Emitter–Base Capacitance

(VEB = 0.5 Vdc, f = 1.0 MHz)

Ceb

—

80

pF

3. Pulse Test: Pulse Width = 300

ms, Duty Cycle = 2.0%.

Figure 1.

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