Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

MMBTA20LT1 Datasheet(PDF) 6 Page - ON Semiconductor

Part # MMBTA20LT1
Description  General Purpose Amplifier(NPN Silicon)
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBTA20LT1 Datasheet(HTML) 6 Page - ON Semiconductor

  MMBTA20LT1 Datasheet HTML 1Page - ON Semiconductor MMBTA20LT1 Datasheet HTML 2Page - ON Semiconductor MMBTA20LT1 Datasheet HTML 3Page - ON Semiconductor MMBTA20LT1 Datasheet HTML 4Page - ON Semiconductor MMBTA20LT1 Datasheet HTML 5Page - ON Semiconductor MMBTA20LT1 Datasheet HTML 6Page - ON Semiconductor MMBTA20LT1 Datasheet HTML 7Page - ON Semiconductor MMBTA20LT1 Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 6 / 8 page
background image
MMBTA20LT1
http://onsemi.com
6
Figure 19. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05 0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
ZθJA(t) = r(t) • RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
t1
t2
P(pk)
FIGURE 19A
Figure 19A.
TJ, JUNCTION TEMPERATURE (°C)
104
-40
Figure 20.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
400
2.0
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the
model as shown in Figure 19A. Using the model and the de-
vice thermal response the normalized effective transient ther-
mal resistance of Figure 19 was calculated for various duty
cycles.
To find ZθJA(t), multiply the value obtained from Figure 19
by the steady state value RθJA.
Example:
The MPS3904 is dissipating 2.0 watts peak under the follow-
ing conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
The safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 20 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 19. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
10-2
10-1
100
101
102
103
-20
0
+20 +40 +60 +80 +100 +120 +140 +160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 µs
TC = 25°C
1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0 8.0 10
20
40
TJ = 150°C
100 µs


Similar Part No. - MMBTA20LT1

ManufacturerPart #DatasheetDescription
logo
Motorola, Inc
MMBTA20LT1 MOTOROLA-MMBTA20LT1 Datasheet
413Kb / 8P
   General Purpose Amplifier
logo
Leshan Radio Company
MMBTA20LT1 LRC-MMBTA20LT1 Datasheet
316Kb / 6P
   General Purpose Amplifier (NPN Silicon)
More results

Similar Description - MMBTA20LT1

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
MMBT3416LT3 ONSEMI-MMBT3416LT3 Datasheet
297Kb / 8P
   General Purpose Amplifier(NPN Silicon)
logo
Leshan Radio Company
MMBTA20LT1 LRC-MMBTA20LT1 Datasheet
316Kb / 6P
   General Purpose Amplifier (NPN Silicon)
L2SC5658M3T5G LRC-L2SC5658M3T5G Datasheet
79Kb / 4P
   General Purpose Amplifier NPN Silicon Transistor
logo
First Silicon Co., Ltd
FTC5658 FS-FTC5658 Datasheet
498Kb / 5P
   NPN Silicon General Purpose Amplifier Transistor
logo
Leshan Radio Company
L2SC5658RM3T5G LRC-L2SC5658RM3T5G_15 Datasheet
164Kb / 5P
   NPN Silicon General Purpose Amplifier Transistor
logo
ON Semiconductor
2SC4617G ONSEMI-2SC4617G_14 Datasheet
58Kb / 4P
   NPN Silicon General Purpose Amplifier Transistor
July, 2014 ??Rev. 6
2SC5658M3T5G ONSEMI-2SC5658M3T5G Datasheet
130Kb / 4P
   NPN Silicon General Purpose Amplifier Transistor
September, 2009 ??Rev. 1
logo
Vaishali Semiconductor
2SC5658M3T5G VAISH-2SC5658M3T5G Datasheet
48Kb / 4P
   NPN Silicon General Purpose Amplifier Transistor
logo
ON Semiconductor
2SC4617 ONSEMI-2SC4617 Datasheet
128Kb / 6P
   General Purpose Amplifier Transistors(NPN Silicon)
November, 2001 ??Rev. 3
2SC5658M3T5G ONSEMI-2SC5658M3T5G_14 Datasheet
101Kb / 5P
   NPN Silicon General Purpose Amplifier Transistor
August, 2014 ??Rev. 5
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com