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IC61LV2568 Datasheet(PDF) 2 Page - Integrated Circuit Solution Inc |
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IC61LV2568 Datasheet(HTML) 2 Page - Integrated Circuit Solution Inc |
2 / 9 page IC61LV2568 2 Integrated Circuit Solution, Inc. AHSR023-0A 09/12/2001 ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution, Inc. FEATURES • High-speed access times: — 8, 10, 12 and 15 ns • High-preformance, lower-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • CMOS power: 540 mW @ 10 ns 36 mW standby mode • TTL compatible inputs and outputs • Single 3.3V ± 10% power supply • Packages available: — 36-pin 400mil SOJ — 44-pin TSOP-2 DESCRIPTION The ICSI IC61LV2568 is a very high-speed, low power, 262,144-word by 8-bit COMS static RAM. The IC61LV2568 is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low power consumotion devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 36 mW (max.) with CMOS input levels. The IC61LV2568 operates from a single 3.3V power supply and all inputs are TTL-compatible. The IC61LV2568 is available in 36-pin, 400mil SOJ and 44-pin TSOP-2 package. 256K x 8 HIGH-SPEED CMOS STATIC RAM FUNCTIONAL BLOCK DIAGRAM A0-A17 CE OE WE 256K X 8 MEMORY ARRAY DECODER COLUMN I/O CONTROL CIRCUIT GND VCC I/O DATA CIRCUIT I/O0-I/O7 |
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