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T436416C Datasheet(PDF) 10 Page - Taiwan Memory Technology

Part # T436416C
Description  4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
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Manufacturer  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T436416C Datasheet(HTML) 10 Page - Taiwan Memory Technology

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TE
CH
tm
T436416C
TM Technology Inc. reserves the right
P.10
Publication Date: AUG. 2004
to change products or specifications without notice.
Revision: A
MODE REGISTER
Register Programmed with MRS
Address
A13~A12
A11~A10/AP
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
RFU
RFU
RF
U
TM
CAS Latency
BT
Burst Length
Test Mode
CAS Latency
Burst Type
Burst Length
A8
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT=0
BT=1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Reserved
0
0
1
Reserved
1
Interleave
0
0
1
2
2
1
0
Reserved
0
1
0
2
0
1
0
4
4
1
1
Reserved
0
1
1
3
0
1
1
8
8
1
0
0
Reserved
1
0
0
Reserved
Reserved
1
0
1
Reserved
1
0
1
Reserved
Reserved
1
1
0
Reserved
1
1
0
Reserved
Reserved
1
1
1
Reserved
1
1
1
Full Page
Reserved
Full Page Length : 256
Note : 1. RFU (reserved for future use) should stay “0” during MRS cycle.
2. Test mode use A7~A8, vendor specific options use A9, A10~A11 and A12~A13.
A7~A8, A10 /AP~A11 and A12~A13 must be set to low for normal SDRAM operation.
Refer to the table for specific codes for various burst length, burst type and CAS latencies.
Mode Register Write Timing
CL O C K
CK E
CS
RA S
CA S
WE
A0 - A 1 3


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