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T436416C Datasheet(PDF) 10 Page - Taiwan Memory Technology |
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T436416C Datasheet(HTML) 10 Page - Taiwan Memory Technology |
10 / 28 page TE CH tm T436416C TM Technology Inc. reserves the right P.10 Publication Date: AUG. 2004 to change products or specifications without notice. Revision: A MODE REGISTER Register Programmed with MRS Address A13~A12 A11~A10/AP A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Function RFU RFU RF U TM CAS Latency BT Burst Length Test Mode CAS Latency Burst Type Burst Length A8 A7 Type A6 A5 A4 Latency A3 Type A2 A1 A0 BT=0 BT=1 0 0 Mode Register Set 0 0 0 Reserved 0 Sequential 0 0 0 1 1 0 1 Reserved 0 0 1 Reserved 1 Interleave 0 0 1 2 2 1 0 Reserved 0 1 0 2 0 1 0 4 4 1 1 Reserved 0 1 1 3 0 1 1 8 8 1 0 0 Reserved 1 0 0 Reserved Reserved 1 0 1 Reserved 1 0 1 Reserved Reserved 1 1 0 Reserved 1 1 0 Reserved Reserved 1 1 1 Reserved 1 1 1 Full Page Reserved Full Page Length : 256 Note : 1. RFU (reserved for future use) should stay “0” during MRS cycle. 2. Test mode use A7~A8, vendor specific options use A9, A10~A11 and A12~A13. A7~A8, A10 /AP~A11 and A12~A13 must be set to low for normal SDRAM operation. Refer to the table for specific codes for various burst length, burst type and CAS latencies. Mode Register Write Timing CL O C K CK E CS RA S CA S WE A0 - A 1 3 |
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